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The EEPROM devicesinclude the high density 512 kilobit (kb) CAT24C512 and 1 megabit (Mb)CAT24M01, which have a 1.8 volt (V) to 5.5 V supply voltage range. The CAT24C512and CAT24M01 employ 256 byte and 128 byte page write buffers respectively. Bothdevices support Standard 100 kilohertz (kHz), Fast 400 kHz, and Fast-Plus 1megahertz (MHz) serial I2C protocols. These devices are manufactured on a 0.18micrometer (µm) low power CMOS process at the ON Semiconductor owned andoperated Gresham, Oregon facility.In addition, the company introduced a series of AEC-Q100 qualified EEPROMs forautomotive designs. These devices have a 2.5 V to 5.5 V supply voltage rangeand support the Standard and Fast I2C protocols. Both the 64 kb CAV24C64 andthe 32 kb CAV24C32 feature 32 byte page write buffers, while the 2 kb CAV24C02,4 kb CAV24C04, 8 kb CAV24C08 and 16 kb CAV24C16 incorporate a 16 byte pagewrite buffer. These devices are also manufactured at the Gresham facility, on a0.35 µm process.It said that all of the new EEPROM devices feature a 100 year data retentionperiod and support for 1,000,000 program/erase cycles. The operatingtemperature range of these serial EEPROMs is 40 °C to +125 °C.According to their launched news, they indicated that further products will beadded to the portfolio later this year, including versions of both the highdensity and automotive devices with SPI interfaces, to complement the I2C interfaceproducts."The state-of-the-art ON Semiconductor facility in Gresham, Oregon,provides us with advanced, in-house manufacturing technology and substantialcapacity to provide a stable supply chain for EEPROM products," said DevNair, marketing director for EEPROM products at ON Semiconductor. "We arepleased to be able to offer high density and automotive qualified I2C EEPROMsto our broad customer base, and look forward to expanding the portfolio furtherwith SPI EEPROMs later this year." He added. Article source: http://www.hqew.net/events/news-article/240.html
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